Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
Q1
1.3
A
Q2
–1.3
V SD
Drain-Source Diode Forward V GS = 0 V, I S = 1.3 A (Note 2)
Voltage
V GS = 0 V, I S = –1.3 A (Note 2)
Q1
Q2
0.7
–0.7
1.2
–1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in 2 pad of 2 oz
b) 125°C/W when
mounted on a .02 in
pad of 2 oz copper
2
c) 135°C/W when mounted on a
minimum pad.
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
Si4542DY Rev A
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SI4542DY-T1 功能描述:MOSFET 30V 6.9/6.1A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4542DY-T1-E3 功能描述:MOSFET 30V 6.9/6.1A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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SI4544DY-E3 功能描述:MOSFET 30V 6.5/5.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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